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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2365 DESCRIPTION With TO-3 package High breakdown voltage APPLICATIONS For use in switch-mode CTV supply systems PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=ae ) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER CHA IN Collector current Collector-base voltage Collector-emitter voltage E SEM NG Open emitter Open base Open collector OND IC CONDITIONS TOR UC VALUE 600 500 6 6 8 UNIT V V V A A W ae ae Emitter-base voltage Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25ae 50 150 -55~150 Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER CONDITIONS MIN 2SC2365 SYMBOL TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;IB=0 500 V V(BR)EBO VCEsat Emitter-base breakdown voltage IE=1mA ;IC=0 IC=4A; IB=1.25A 6 V Collector-emitter saturation voltage 3.0 V VBEsat Base-emitter saturation voltage IC=4A; IB=1.25A 1.6 V ICBO Collector cut-off current VCB=600V; IE=0 0.1 mA IEBO Emitter cut-off current VEB=6V; IC=0 0.1 mA hFE DC current gain IC=3A ; VCE=4V fT Transition frequency IC=0.5A ; VCE=10V CHA IN E SEM NG OND IC TOR UC 10 12 MHz 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC2365 CHA IN E SEM NG OND IC TOR UC Fig.2 outline dimensions (unindicated tolerance:A 0.1mm) 3 |
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